Supporting material for synthesis of ndoped graphene by chemical vapor deposition and its electrical properties dacheng wei, yunqi liu, yu wang, hongliang zhang, liping huang, and gui yu beijing national laboratory for molecular sciences, key laboratory of organic solids, institute of. Fabrication of graphene with cuo islands by chemical vapor. The ndoped graphene were removed from the substrate by scratching and sonicating in 0. Therefore, our focus is on understanding the mechanism of graphene formation and also on controlling the growth process. Considerable efforts have been devoted to the investigation of catalysts for graphene growth by chemical vapor deposition i. A massproducible mesoporous graphene nanoball mgb was fabricated via a precursorassisted chemical vapor deposition cvd technique for supercapacitor application. Direct growth of graphene on silicon by metalfree chemical vapor deposition lixuan tai1,3.
In this work, chemical vapor deposition cvd methodgrown graphene on plasmaetched quartz glass supported platinum nanoparticles ptnpseqg was constructed as an independent transparent electrode for nonenzymatic hydrogen peroxide h 2 o 2 detection. In this work, we report the growth of graphene directly on an upsidedown placed, singlecrystal silicon substrate using metalfree, ambientpressure chemical vapor deposition. Chemical vapor deposition cvd is one of the most efficient methods for the synthesis of largearea graphene films with high crystallinity and. Promoterassisted chemical vapor deposition of graphene yaping hsieh a, mario hofmann b, jing kong c a graduate institute of optomechatronics, national chung cheng university, 168 university road, minhsiung township, chiayi county. The largescale production of graphene for electronic devices relies on catalytic chemical vapor deposition cvd li et al. Pressurecontrolled chemical vapor deposition of graphene. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasmaassisted thermal. The key strategy involves the use of a cvd process to heal defects contained within the monolayers, which imparts a two order of magnitude enhancement of electrical conductivity over the merely reduced samples. Various methods have been proposed for the synthesis of graphene, and chemical vapour deposition cvd appears to be the most promising route for synthesising largearea graphene. We demonstrate that homogeneous singlelayer graphene can be grown by simply annealing crystalline cu111cplane sapphire.
See how one research team used modeling to analyze and enhance the cvd graphene growth mechanism. Article direct growth of graphene on silicon by metalfree chemical vapor deposition lixuan tai1,3. Graphene grown by chemical vapor deposition on evaporated. A feasible method for producing large areas of single layer graphene, is growth by chemical vapor deposition cvd. We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. The ndoped graphene was dispersed in ethanol by mild sonication, and then. The grown graphene was transferred onto sio 2, au 111 and sapphire substrates. On the nucleation of graphene by chemical vapor deposition. Chemical vapor deposition setup used for graphene synthesis. Graphene grown by chemical vapor deposition on evaporated copper thin films thesis for the degree of master of science o.
Waferscale graphene synthesized by chemical vapor deposition. Lowtemperature synthesis of graphene on cu using plasma. Monolayer graphene films were thus synthesized on cu foil using various ratios of hydrogen and methane in a gaseous mixture. Chemical vapor deposition, also known as cvd, is a chemical process used to produce high quality, highperformance graphene on a fairly large scale.
Graphene synthesis by chemical vapor deposition and transfer. Chemical vapor deposition cvd has been one of the most practical methods for synthesizing largearea graphene3436 and graphene analogues such as boron nitride and bcn nanosheets. Cvd graphene on metals cvd graphene on sio2si transparent conductive coatings flexible conductive coatings graphene transfer. The process is often used in the semiconductor industry to produce thin films in typical cvd, the wafer substrate is exposed to one or more volatile precursors, which react andor decompose on the substrate surface to produce the desired deposit. Chemical vapor deposition of mesoporous graphene nanoballs. Direct chemical vapour deposition of graphene on dielectric surfaces by ariel ismach, clara druzgalski, samuel penwell, adam schwartzberg, maxwell zheng, ali javey, jeffrey bokor and yuegang zhang introduction to nanoscience and nanotechnology by chattopadhyay chemical vapour deposition mechanism by conggin miao, churan zheng, owen liang and ya. The synthesis of threedimensional 3d graphene with petroleum asphalt as a carbon source by chemical vapor deposition on a ni foam substrate has been studied. Sep 28, 2017 the conventional chemical vapor deposition cvd methods on copper or nickel 10,11,12,14 produce goodquality graphene with a high processing temperature of c or more, and the use of. We introduce here chemical vapor deposition growth for highquality graphene and hbn. Graphene, the atomically thin sheet of sp2hybridized carbon atoms arranged in honeycomb structure, since its debut in 2004, graphene has attracted enormous interest due to its unique physical, mechanical and electrical properties. Hipps materials science and engineering program and department of chemistry, washington state university, pullman, washington 991644630 abstract graphene prepared on cu foil by chemical vapor deposition was studied as a function of post growth cooling conditions. A promising method of growing graphene on copper cu foil was developed in 2009 by a group at the university of texas at austin.
This paper reports design of a very lowcost less than 2000 usd chemical vapour deposition cvd reactor for graphene synthesis, based on. A route to highly conductive graphene monolayers by vicente lo. Chemical vapor deposition can grow graphene 100 times faster and reduce costs by 99 percent 4. Singlelayer graphene is formed through surface catalytic decomposition of hydrocarbon precursors on thin copper films predeposited on dielectric substrates. Cvd graphene creating graphene via chemical vapour. Optical photograph of graphene transferred onto a sio 2onsi substrate. Sustained and controlled release of volatile precursors for. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining largescale graphene.
Pdf large scale graphene by chemical vapor deposition. Simultaneously, vertical growth of gss has long been a challenge for thermal chemical vapor deposition cvd. Applied physics letters noncatalytic chemical vapor deposition of graphene on hightemperature substrates for transparent electrodes jie sun,1, a matthew t. Chemical vapor deposition growth of graphene and related materials ryo kitaura1, yasumitsu miyata2, rong xiang3, james hone4, jing kong5, rodney s.
Synthesis of threedimensional graphene from petroleum. The unique properties of graphene have triggered numerous. Polystyrene balls and reduced iron created under high temperature and a hydrogen gas environment provide a solid carbon source and a catalyst for graphene growth during the precursorassisted cvd process, respectively. Growth of graphene on nickel using a natural carbon source by. Synthesizing graphene by chemical vapor deposition youtube. Synthesizing graphene with chemical vapor deposition comsol.
Pressurecontrolled chemical vapor deposition of graphene as catalyst for solar hydrogen evolution reaction. There has been a growing need and rapid development in largearea deposition of graphene film and its applica tions. Chemical vapor deposition of partially oxidized graphene zafer mutlu,a isaac ruiz,b ryan j. Promoterassisted chemical vapor deposition of graphene. Chemical vapor deposition cvd growth of graphene films. Contaminationfree graphene by chemical vapor deposition. Vapor deposition method has emerged as the alternative to produce graphene in large quantities for various applications. Chemical vapor deposition cvd is a novel technique proposed recently to synthesis large area high quality graphene, which was not possible by the conventional mechanical exfoliation method of graphite. Ruoff6, and shigeo maruyama3,7 1nagoya university, furocho, nagoya, aichi 4640814, japan 2tokyo metropolitan university, hachioji, tokyo 1920397, japan.
Highquality atomiclayer materials fabricated by chemical vapor. Synthesis of graphene on copper by hot filament chemical. Singleand fewlayer graphene growth on stainless steel. Chemical vapour deposition, or cvd, is a method which can produce relatively high quality graphene, potentially on a large scale. The growth mechanisms of graphene directly on sapphire. Aug 30, 2017 although the growth of graphene by chemical vapor deposition is a production technique that guarantees high crystallinity and superior electronic properties on large areas, it is still a challenge. Buy graphene films processed in clean room class sort by featured best selling alphabetically, az alphabetically, za price, low to high price, high to low date, new to old date, old to new all. Theoretical analysis shows that cooling rate is about 4 orders of magnitude higher than the conventional cvd system. Here, copper foil was used as the catalytic substrate to grow large area graphene at lpcvd system.
The metalfree synthesis of graphene on singlecrystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. Chemical vapor deposition cvd has been one of the most practical methods for synthesizing largearea graphene 3436 and graphene analogues such as boron nitride and bcn nanosheets. Ozkan ad herein, we report on chemical vapor deposition cvd of. Direct chemical vapor deposition of graphene on plasma. Raman spectra of graphene sample before oxygen plasma etching. Chemical vapor deposition cvd is a vacuum deposition method used to produce high quality, highperformance, solid materials.
Wu, c robert ionescu,a sina shahrezaei,a selcuk temiz,a mihrimah ozkan,b k. Chemical vapor deposition of partially oxidized graphene. Deposition guofang zhong, xingyi wu, lorenzo darsie. The pristine graphene was produced via a similar cvd process by only using ch 4 as feed stock. Synthesis of graphene films on copper foils by chemical. Cvd graphene creating graphene via chemical vapour deposition. We report waferscale graphene synthesized by chemical vapor deposition cvd on copper foils at ambient pressure. Review of chemical vapor deposition of graphene nanografi.
Graphene films were synthesized with the method of chemical vapor deposition using gaseous methane as the source of carbon and copper foil as the substrate for the deposition. Graphene has become the focus of research recently due to its properties. Graphene powders are prepared by the exfoliation of graphite or the reduction of graphene oxide, while graphene films are prepared predominantly by chemical vapor deposition cvd on a variety of. Synthesis of largearea mos2 atomic layers with chemical. Mechanically exfoliated graphene may produce the purest graphene, but it is very expensive and yields low quantities. The cvd process is reasonably straightforward, although some specialist equipment is necessary, and in order to create good quality graphene it is important to strictly adhere to guidelines set concerning gas volumes. The documents may come from teaching and research institutions in france or abroad, or from public or private research centers. Graphene powders are prepared by the exfoliation of graphite or the reduction of graphene oxide, while graphene films are prepared predominantly by chemical vapor deposition cvd on a variety of substrates. The copper films dewet and evaporate during or immediately after graphene growth, resulting in graphene.
Jun 12, 20 plasmaassisted thermal chemical vapor deposition cvd was carried out to synthesize highquality graphene film at a low temperature of 600c. Direct growth of graphene on silicon by metalfree chemical. Nov 06, 2014 with its growing use in numerous applications, the demand for graphene has steadily increased over the years. Graphene grown on quartz glass by the cvd method can effectively reduce the wrinkles and pollution caused by traditional transfer methods. Chemical vapor deposition growth of graphene and related. Graphene synthesis by chemical vapor deposition and. Large scale atmospheric pressure chemical vapor deposition of. Here, vertical growth of the gss is achieved in a thermal cvd reactor and a novel 3d graphene structure, 3d graphene fibers 3dgfs, is developed. Synthesis of ndoped graphene by chemical vapor deposition. Graphene can be used in the forms of either microflake powders or largearea thin films. Direct deposition of graphene on various dielectric substrates is demonstrated using a singlestep chemical vapor deposition process. Promoterassisted chemical vapor deposition of graphene yaping hsieh a, mario hofmann b, jing kong c a graduate institute of optomechatronics, national chung cheng university, 168 university road, minhsiung township, chiayi county 62102, taiwan b department of materials science and engineering, national cheng kung university, no.
Large scale atmospheric pressure chemical vapor deposition. Synthesis and characterization of graphene films by hot filament chemical vapor. The chemical vapour deposition cvd of graphene is the most promising route for. Herein, by exploiting the molten state of sodalime glass, we have accomplished the direct growth of large area uniform up to 30 cm. Using an ample amount of vaporized palm oil resulted in the formation of a thick, amorphous carbon film on the ni surface. Synthesizing graphene with chemical vapor deposition. Chemical vapor deposition repair of graphene oxide.
Chemical vapor deposition cvd of graphene has shown substantial promise for large area deposition with reasonably high quality and low process time on transition metal substrates such as copper cu, nickel ni, cobalt co, platinum pt, iridium ir and ruthenium ru. Synthesis of graphene films on copper foils by chemical vapor. The realization of graphenebased, nextgeneration electronic applications essentially depends on a reproducible, largescale production of graphene films via chemical vapor deposition cvd. We report the growth of fewlayer graphene flg on a nickel ni substrate using palm oil as a single carbon source by thermal chemical vapor deposition tcvd. Pdf on apr 19, 2011, congqin miao and others published chemical vapor deposition of graphene find, read and cite all the research you need on researchgate.
Then the graphene can be separated from the metal and transferred to different substrates depending on the application. Review of chemical vapor deposition of graphene and. Sundaram, cristina gomeznavarro, david olea, marko burghard, julio go. Ruoff6, and shigeo maruyama3,7 1nagoya university, furocho, nagoya, aichi 4640814, japan 2tokyo metropolitan university, hachioji, tokyo 1920397, japan 3the university of tokyo, bunkyoku, tokyo 18656, japan. Alfonso reina, xiaoting jia, john ho, daniel nezich, hyungbin. Chemical vapor deposition of high quality graphene films. Direct chemical vapor deposition of graphene on dielectric. Noncatalytic chemical vapor deposition of graphene on high. The capability of ultrafast heating and cooling provided by the mems platform is crucial for the controlled growth of graphene.
This thesis focuses on the growth of graphene by low pressure chemical vapor deposition lpcvd and doping it with n 2 by using n 2 plasma treatment. Pdf chemical vapor deposition synthesis of largearea. The morphology and properties of threedimensional graphene synthesized from asphalt were characterized by scanning electron microscopy, transmission electron microscopy, raman. The resulting graphene film shows a high carrier mobility of 1210 cm2 v. This heightened interest has prompted new research behind the methods for synthesizing graphene one of which is chemical vapor deposition. In this method, graphene is grown on metallic surface such as cu, pt, ir etc. The cvd process is reasonably straightforward, although some specialist equipment is necessary, and in order to create good quality graphene it is important to strictly adhere to guidelines set concerning gas volumes, pressure, temperature, and time duration. Fabricating graphene by chemical vapor deposition directly on dielectric substrates and its diode characteristic and field electron emission study in this chapter, horizontally and vertically oriented fewlayer graphenes have been synthesized directly on dielectric substrates by thermal and hotfilament chemical vapor.
Growth of continuous graphene by open rolltoroll chemical vapor. Chapter 6 fabricating graphene by chemical vapor deposition. Growth of graphene on nickel using a natural carbon source. Author links open overlay panel chihpin han a chihjung chen a chenchih hsu b anirudha jena a c ho chang c naichang yeh b. Mechanisms of graphene growth by chemical vapour deposition. Sem images of copper and graphene fingers obtained by thermal cvd process. The process is often used in the semiconductor industry to produce thin films. Near room temperature chemical vapor deposition of.
Near room temperature chemical vapor deposition of graphene. Teo,3 and august yurgens1 1department of microtechnology and nanoscience, quantum device physics laboratory, chalmers university of technology, s41296 gothenburg, sweden. The growth mechanisms of graphene directly on sapphire substrates by using the chemical vapor deposition mengyu lin,1,2 chenfung su,2 sichen lee,1 and shihyen lin1,2,3,a 1graduate institute of electronics engineering, national taiwan university, taipei 10617, taiwan. Eindhoven university of technology master an optimization of. The growth mechanisms of graphene directly on sapphire substrates by using the chemical vapor deposition mengyu lin,1,2 chenfung su,2 sichen lee,1 and shihyen lin1,2,3,a 1graduate institute of electronics engineering, national taiwan university, taipei 10617, taiwan 2research center for applied sciences, academia sinica, taipei 11529, taiwan 3department of photonics, national chiao tung. Graphene grown via chemical vapor deposition on nickel and copper foil, film, and foam. Chemical vapour deposition and chemical vapor deposition. Contaminationfree graphene by chemical vapor deposition in. Direct growth of graphene on silicon by metalfree chemical vapor.
1256 61 98 388 1157 695 602 679 1254 467 1394 745 662 574 781 575 1449 925 584 246 50 113 513 487 389 860 653 1479 1418 1384 657 1342 372 486 694 375 236 1188